Description
Date depot: 1 janvier 1900
Titre: Non Volatile Random Access Memory Design and Characterization
Directrice de thèse:
Lirida NAVINER (LTCI (EDMH))
Domaine scientifique: Sciences et technologies de l'information et de la communication
Thématique CNRS : Non defini
Resumé:
Driven by the demand of mobile applications (phone, tablette, MP3 players…) the market for memories is growing very fast. Today there are 3 mainstream semiconductor memory technologies: SRAM, DRAM and NVM. SRAM (Static-RAM) is characterized by their speed and used as cache for CPUs.
DRAM (Dynamic-RAM) is the predominant form of computer memory used off-die in modern computers due to their higher density and lower cost. Both static and dynamic RAM are forms of volatile memory i.e. stored information is lost when power is removed. In contrast NVM (Non-Volatile Memory) enables data to persist without power. NVM is primarily used in memory cards, USB drivers etc. with a market dominated by FLASH products. However NVM has not yet been incorporated into microprocessor or System on Chip (SoC) designs. This is due to long write access time, dynamic power consumption and endurance issues.
Recently resistive NVM e.g. CBRAM (Conductive bridge RAM) and OxRAM (Oxide RAM) have gained a lot of attention due to their inherent non-volatility, zero standby leakage power, high density and particularly fast access time (order of nanosecond). These attributes are obviously promising for future high-performance and low-power computing applications. The zero standby leakage current of NVMs makes them very attractive for cache implementation, being the main source of power consumption. Similarly their non-volatility appears very useful for system backup, recovery and error correction circuits.
Doctorant.e: Jovanovic Natalija