Projet de recherche doctoral numero :4738


Date depot: 1 janvier 1900
Titre: Ultra Low Power TFET-CMOS based Circuits
Directeur de thèse: Costin ANGHEL (Non relevant)
Domaine scientifique: Sciences et technologies de l'information et de la communication
Thématique CNRS : Non defini

Resumé: The nano-Complementary Metal Oxide Semiconductor (CMOS) devices face today many fundamental limits in terms of performance and power consumption. Devices like the TFET have already been proposed as replacement of standard CMOS for low-power applications, to overcome the limitations of the latter. The TFET operates by quantum-tunneling effect and, therefore, does not suffer from the subthreshold slope limitation, as does CMOS. Progress on TFET devices has encouraged research on TFET circuits. The few reports in the literature on TFET circuits describe mostly the design of TFET SRAM cells. Part of the above-mentioned literature reports on TFET SRAMs, revealed difficulties in obtaining sufficient stability in read and write operations. As the stability in both operation modes is inherently low due to the electrical performance of the TFETs, it is difficult for circuit designers to find the best balance between read and write. Moreover, due to the unidirectional TFET behaviour, the researchers were forced to target low-VDD operation, making it ever more difficult to obtain sufficient stability margins in the active mode. Focus of this research is on exploring new solutions for TFET based circuits, while addressing critical issues at circuit level.

Doctorant.e: Gupta Navneet